The Use of Muliiple Ebic Curves and Low Voliage Electron Microscopy in 1he Measuremen1 of Small Diffusion Lengihs

Diffusion length measurements were made in highly doped and radiation damaged III-V semiconductors using the technique of charge collection microscopy (sometimes known as electron beam induced current (EBIC)). EBIC curves were plotted while using the SEM on a llne scan mode. Values of the currents read from these curves were then equated to expressions obtained from the solution of the diffusion equation for a thick sample. An extended generation function was used in order to account for the finite volume of the induced minority carriers. The surface recombination velocity was either treated as an unknown In a system of two integral equations, or measured directly using low accelerating potentials for the electron beam.